Substituted GGG (SGGG) EPI 1sp Single Crystal Substrates
SGGG single crystal, (substituted gadolinium gallium garnet) is grown by Czochralski method .
SGGG crystals with calcium, magnesium and zirconium as substituting ions, which are used as the substrates for the growth of bismuth-substituted iron garnet epitaxial films, which is good material for YIG,and BIG flim.
Substituted Gadolinium Gallium Garnet (SGGG) is used as substrates for liquid epitaxy. The lattice parameter of our crystals is well controlled and the surface polish finishing is of the highest quality, allowing a perfect epitaxy.
SGGG is used as substrates for liquid epitaxy.It's dedicated substrates for magneto-optical film.
Anhui Crystro participate in the kinds exhibitions every year: Laser World of Photonics Munich, Shanghai, Photonics West in San Francisco, CIOE in Shenzhen, etc.
| Crystal properties |
| Crystal growth method | Czochralski |
| Crystal growth orientation | (100), (111) |
| Maximum size | 3 inch diameter |
| Variations | Dopands on request |
| Crystallographic properties |
| Crystallographic structure | Cubic |
| a = 12.383 Å |
| a = 12.505 Å SGGG |
| Mineralogical | Garnet |
| Twinning structure | Perfect |
| Colour | Colourless / Brownish SGGG |
| Physical properties |
| Density | 7.09 g/cm3 |
| Melting point | 1730 °C |
| Hardness | 7.5 (Mohs) |
| Dielectric constant | 30 |
| Dielectric loss tangent (10 GHz) | ca. 3.0 * 10_4 |
| Optical properties |
| Transmission range | 0.3 to 7.0 mm |
| Refraction index: | nd = 1.9708 at 577 nm |
Compare GGG with SGGG:
| Material | GGG | SGGG |
| Chemical Formular | Gd3Ga5O12 | Substituted GGG |
| Lattice Constant | 12.383A | 12.497A |
| Growth Method | Czochralski | Czochralski |
| Density | 7.13g/cm3 | 7.09g/cm3 |
| Mohs Hardness | 8 | 7.5 |
| Melting Point | 1725℃ | 1730℃ |
| Refractive Index | 1.954 at 1064nm | 1.954 at 1064nm |
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Substituted GGG SGGG EPI 1SP Single Crystal Substrates Images
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